Lesker Thin Film Deposition System
The KJLC AXXIS system provides three mechanisms for film deposition: thermal evaporation, electron-beam induced deposition, and DC & RF magnetron sputtering enabling the deposition of insulating and magnetic as well as conductive materials up to 400oC. The maximum diameter of substrate is 4” with a thin film uniformity of <±5%.
Substrate Temperature: RT~800oC
Substrate Diameter: 0~6in.
Thin film uniformity: <±5%
Ni, Ti, Mo, Cu, Cr, Fe, ITO, Si,
SiO2, Ca, TiN, Al
Electron Beam Evaporation:
Au, Pd, Pt, Fe, Cr, Ni